Open AccessErratum: “Mechanism of the performance improvement of TiO2-x-based field-effect transistor using SiO2 as gate insulator” [AIP Advances 1, 032167 (2011)]
Author(s) -
Ni Zhong,
Hisashi Shima,
Hiroyuki Akinaga
Publication year - 2011
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.3660334
Subject(s) - mechanism (biology) , transistor , optoelectronics , field effect transistor , silicon on insulator , materials science , field (mathematics) , insulator (electricity) , engineering physics , nanotechnology , physics , silicon , quantum mechanics , voltage , mathematics , pure mathematics
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