Determination of vacancy concentrations in the bulk of silicon wafers by platinum diffusion experiments | Zendy

Mohan V. Jacob | Zendy; P. Pichler | Zendy; H. Ryssel | Zendy; R. Falster | Zendy

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Determination of vacancy concentrations in the bulk of silicon wafers by platinum diffusion experiments

Author(s) -

Mohan V. Jacob,

P. Pichler,

H. Ryssel,

R. Falster

Publication year - 1997

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.365796

Subject(s) - platinum , silicon , wafer , diffusion , vacancy defect , materials science , range (aeronautics) , atmospheric temperature range , analytical chemistry (journal) , chemistry , thermodynamics , metallurgy , nanotechnology , crystallography , composite material , physics , biochemistry , chromatography , catalysis

Diffusion of platinum at low temperatures is a convenient way to characterize vacancy profiles in silicon. This article summarizes the experiments performed to find a standard procedure, discusses the pitfalls and limitations, and shows the applicability of the method. The results of experiments with FZ and CZ samples in the temperature range from 680 deg C to 842 deg C were found to disagree with the predictions of models published in the literature. Therefore, parameters governing the diffusion of point defects and platinum in silicon were determined for this temperature range

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