Characterization of FeSe thin films prepared on GaAs substrate by selenization technique | Zendy

Yasushi Takemura | Zendy; Hajime Sutô | Zendy; N. Honda | Zendy; K. Kakuno | Zendy; K. Saito | Zendy

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Characterization of FeSe thin films prepared on GaAs substrate by selenization technique

Author(s) -

Yasushi Takemura,

Hajime Sutô,

N. Honda,

K. Kakuno,

K. Saito

Publication year - 1997

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.365162

Subject(s) - auger electron spectroscopy , materials science , substrate (aquarium) , thin film , molecular beam epitaxy , layer (electronics) , analytical chemistry (journal) , epitaxy , characterization (materials science) , nanotechnology , chemistry , oceanography , physics , chromatography , geology , nuclear physics

FeSe thin films were prepared on GaAs(100) substrate by the selenization of Fe films using molecular-beam epitaxy. FeSe compound thin films were obtained at a substrate temperature above 380 degrees C. From the depth profiles of Fe and Se in the selenized film measured by Auger electron spectroscopy, it was confirmed that an FeSe layer with a constant ratio of Fe/Se was formed. The measured composition ratio of Fe/Se in the film was 1/3. It was different from the composition in Fe3Se4 or Fe7Se8, which is a stable bulk FeSe compound. From the measured M-H curve, it was found that the obtained FeSe film consisted of two phases with different magnetic properties. (C) 1997 American Institute of Physics

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