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Sensitivity improvement of silicon-on-insulator photodiode by gold nanoparticles with substrate bias control
Author(s) -
Atsushi Ono,
Yuki Matsuo,
Hiroaki Satoh,
Hiroshi Inokawa
Publication year - 2011
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.3622650
Subject(s) - silicon on insulator , photodiode , materials science , colloidal gold , silicon , optoelectronics , substrate (aquarium) , nanoparticle , biasing , layer (electronics) , depletion region , wavelength , nanotechnology , voltage , semiconductor , electrical engineering , oceanography , engineering , geology
textversion:publisherThe sensitivity of silicon-on-insulator (SOI) lateral p-n junction photodiode was enhanced by attaching gold (Au) nanoparticles. This was confirmed by comparing I-V characteristics with and without Au nanoparticles at various substrate voltages. Twofold enhancement was attained in the visible wavelength region when the substrate was biased to positive. The substrate bias changed the area of depletion layer in SOI, and the light scattering by Au nanoparticles effectively enhanced the sensitivity when the area of depletion layer was small

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