Open AccessModeling the post-burn-in abnormal base current in AlGaAs/GaAs heterojunction bipolar transistors
Author(s) -
ShiannTsong Sheu,
J.J. Liou,
C.I. Huang,
Denis Williamson
Publication year - 1996
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.361451
Subject(s) - burn in , bipolar junction transistor , heterojunction , heterostructure emitter bipolar transistor , heterojunction bipolar transistor , current (fluid) , optoelectronics , transistor , materials science , base (topology) , range (aeronautics) , condensed matter physics , electrical engineering , physics , voltage , composite material , engineering , mathematical analysis , mathematics
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