Effect of DC bias on electrical conductivity of nanocrystalline α-CuSCN | Zendy

T. Prakash | Zendy; S. Ramasamy | Zendy; B.S. Murty | Zendy

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Effect of DC bias on electrical conductivity of nanocrystalline α-CuSCN

Author(s) -

T. Prakash,

S. Ramasamy,

B.S. Murty

Publication year - 2011

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.3583601

Subject(s) - nanocrystalline material , grain boundary , materials science , electrical resistivity and conductivity , conductivity , dc bias , biasing , electrical impedance , schottky diode , condensed matter physics , grain size , analytical chemistry (journal) , voltage , chemistry , optoelectronics , electrical engineering , composite material , physics , microstructure , nanotechnology , engineering , chromatography , diode

The grain boundary space charge depletion layer in nanocrystalline alpha phase CuSCN is investigated by studying electrical properties using impedance spectroscopic analysis in frequency domain. The measurements were performed at room temperature in wide frequency range 1 Hz to 1 MHz under various DC bias applied voltages ranges from 0 V to -2.1 V. The effect of bias on grain and grain boundary contribution electrical conductivity has been investigated by equivalent circuit model using non-linear least squares (NLLS) fitting of the impedance data. Three order of magnitude variation of grain boundary conductivity was observed for varying 0 V to -2.1 V. Variations in the σac clearly elucidate the DC bias is playing crucial role on grain boundary double Schottky barriers of nanocrystalline α-CuSCN

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