Base and collector leakage currents of AlGaAs/GaAs heterojunction bipolar transistors
Author(s) -
Juin J. Liou,
C.I. Huang,
B. Bayraktaroglu,
Denis Williamson,
K. Parab
Publication year - 1994
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.357502
Subject(s) - heterojunction bipolar transistor , materials science , optoelectronics , heterojunction , leakage (economics) , bipolar junction transistor , dielectric , transistor , common emitter , heterostructure emitter bipolar transistor , gallium arsenide , doping , electrical engineering , voltage , economics , macroeconomics , engineering
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