Open AccessPassivation effects of fluorine and hydrogen at the SiC–SiO2 interface
Author(s) -
Yingdi Liu,
Michael Halfmoon,
Christine A. Rittenhouse,
Sanwu Wang
Publication year - 2010
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.3527943
Subject(s) - passivation , fluorine , hydrogen fluoride , microelectronics , hydrogen , materials science , crystallographic defect , density functional theory , chemical physics , inorganic chemistry , nanotechnology , chemistry , computational chemistry , metallurgy , crystallography , organic chemistry , layer (electronics)
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