Open AccessCalculation of the base current components and determination of their relative importance in AlGaAs/GaAs and InAlAs/InGaAs heterojunction bipolar transistors
Author(s) -
Juin J. Liou
Publication year - 1991
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.348556
Subject(s) - heterojunction , bipolar junction transistor , common emitter , current density , heterojunction bipolar transistor , optoelectronics , materials science , gallium arsenide , transistor , heterostructure emitter bipolar transistor , current (fluid) , condensed matter physics , chemistry , voltage , electrical engineering , physics , quantum mechanics , engineering
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