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Excitonic and Raman properties of ZnSe/Zn1−xCdxSe strained-layer quantum wells
Author(s) -
H. J. Łożykowski,
Vasant Shastri
Publication year - 1991
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.348543
Subject(s) - photoluminescence , raman scattering , exciton , raman spectroscopy , condensed matter physics , quantum well , phonon , band gap , resonance (particle physics) , quantum dot , scattering , photoluminescence excitation , wide bandgap semiconductor , chemistry , photon energy , materials science , excitation , photon , physics , atomic physics , optoelectronics , optics , laser , quantum mechanics

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