Effects of using the more accurate intrinsic concentration on bipolar transistor modeling
Author(s) -
Juin J. Liou,
J.S. Yuan,
Waisum Wong
Publication year - 1990
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.346942
Subject(s) - bipolar junction transistor , transistor , current (fluid) , materials science , chemistry , optoelectronics , thermodynamics , physics , voltage , quantum mechanics
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