Determination of shallow minority-acceptor concentration in multiply doped silicon
Author(s) -
G. Bambakidis,
Gail J. Brown
Publication year - 1989
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.342683
Subject(s) - acceptor , doping , silicon , boron , semiconductor , analytical chemistry (journal) , materials science , photothermal therapy , ionization energy , spectral line , ionization , chemistry , molecular physics , condensed matter physics , optoelectronics , ion , nanotechnology , physics , organic chemistry , chromatography , astronomy
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