Origin of reverse annealing effect in hydrogen-implanted silicon
Author(s) -
Zengfeng Di,
Y. Q. Wang,
M. Nastasi,
N. David Theodore
Publication year - 2010
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.3396987
Subject(s) - annealing (glass) , nucleation , silicon , materials science , hydrogen , crystallography , metallurgy , chemistry , organic chemistry
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