Open AccessRecombination-current suppression in GaAs p-n junctions grown on AlGaAs buffer layers by molecular-beam epitaxy
Author(s) -
David Rancour,
M. R. Melloch,
R.F. Pierret,
Mark Lundstrom,
M. E. Klausmeier-Brown,
C. S. Kyono
Publication year - 1987
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.339624
Subject(s) - molecular beam epitaxy , optoelectronics , diode , gallium arsenide , epitaxy , materials science , deep level transient spectroscopy , layer (electronics) , buffer (optical fiber) , chemistry , nanotechnology , silicon , electrical engineering , engineering
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