Open AccessSilicon strained layers grown on GaP(001) by molecular beam epitaxy
Author(s) -
P. M. J. Marée,
R. Olthof,
J.W.M. Frenken,
J. F. van der Veen,
C. W. T. BulleLieuwma,
M. P. A. Viegers,
P. C. Zalm
Publication year - 1985
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.335811
Subject(s) - molecular beam epitaxy , materials science , transmission electron microscopy , raman spectroscopy , epitaxy , condensed matter physics , silicon , perpendicular , thin film , stress relaxation , crystallography , optoelectronics , optics , chemistry , nanotechnology , composite material , layer (electronics) , creep , physics , geometry , mathematics
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