Open AccessOn carrier spillover in c- and m-plane InGaN light emitting diodes
Author(s) -
J. Lee,
X. Li,
X. Ni,
Ü. Özgür,
H. Morkoç,
T. Paskova,
G. Mulholland,
K. R. Evans
Publication year - 2009
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.3266833
Subject(s) - quantum efficiency , light emitting diode , optoelectronics , materials science , photoluminescence , diode , charge carrier , polarization (electrochemistry) , wide bandgap semiconductor , excitation , optics , chemistry , physics , quantum mechanics
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