z-logo
open-access-imgOpen Access
Optical and electron beam studies of carrier transport in quasibulk GaN
Author(s) -
Yuqing Lin,
Elena Flitsyian,
Leonid Chernyak,
T. Malinauskas,
R. Aleksiejūnas,
K. Jarašiūnas,
Wootaek Lım,
S. J. Pearton,
Konstantin Gartsman
Publication year - 2009
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.3220062
Subject(s) - cathodoluminescence , electron beam induced current , materials science , carrier lifetime , atmospheric temperature range , optoelectronics , scanning electron microscope , wide bandgap semiconductor , grating , epitaxy , analytical chemistry (journal) , diffusion , optics , chemistry , silicon , luminescence , nanotechnology , physics , layer (electronics) , chromatography , meteorology , composite material , thermodynamics

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom