Open AccessEvolution of implantation induced damage under further ion irradiation: Influence of damage type
Author(s) -
Zengfeng Di,
Yongqiang Wang,
M. Nastasi,
N. David Theodore
Publication year - 2009
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.3086313
Subject(s) - irradiation , ion , ion implantation , materials science , radiation damage , silicon , dissociation (chemistry) , proton , radiochemistry , atomic physics , crystallographic defect , vacancy defect , analytical chemistry (journal) , chemistry , crystallography , optoelectronics , nuclear physics , physics , organic chemistry , chromatography
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