Open AccessTime-resolved photoluminescence properties of AlGaN/AlN/GaN high electron mobility transistor structures grown on 4H-SiC substrate
Author(s) -
Г. Позина,
C. Hemmingsson,
Urban Forsberg,
Anders Lundskog,
A. KakanakovaGeorgieva,
B. Ḿonemar,
Lars Hultman,
Erik Janzén
Publication year - 2008
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.3028687
Subject(s) - photoluminescence , materials science , optoelectronics , wide bandgap semiconductor , heterojunction , excitation , chemical vapor deposition , transistor , substrate (aquarium) , electron , electron mobility , electric field , voltage , physics , oceanography , quantum mechanics , geology
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