Detailed arsenic concentration profiles at Si/SiO2 interfaces | Zendy

Lirong Pei | Zendy; Gerd Duscher | Zendy; C. Steen | Zendy; P. Pichler | Zendy; H. Ryssel | Zendy; E. Napolitani | Zendy; D. De Salvador | Zendy; A. M. Piro | Zendy; A. Terrasi | Zendy; Fabrice Sévérac | Zendy; F. Cristiano | Zendy; Karthik Ravichandran | Zendy; Naveen Kumar Gupta | Zendy; Wolfgang Windl | Zendy

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Detailed arsenic concentration profiles at Si/SiO2 interfaces

Author(s) -

Lirong Pei,

Gerd Duscher,

C. Steen,

P. Pichler,

H. Ryssel,

E. Napolitani,

D. De Salvador,

A. M. Piro,

A. Terrasi,

Fabrice Sévérac,

F. Cristiano,

Karthik Ravichandran,

Naveen Kumar Gupta,

Wolfgang Windl

Publication year - 2008

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.2967713

Subject(s) - analytical chemistry (journal) , x ray photoelectron spectroscopy , arsenic , spectroscopy , rutherford backscattering spectrometry , annealing (glass) , materials science , chemistry , secondary ion mass spectrometry , dopant , mass spectrometry , thin film , optoelectronics , nuclear magnetic resonance , nanotechnology , doping , metallurgy , physics , chromatography , quantum mechanics , composite material

The pile-up of arsenic at the Si/SiO2 interface after As implantation and annealing was investigated by high resolution Z-contrast imaging, electron energy-loss spectroscopy (EELS), grazing incidence x-ray fluorescence spectroscopy (GI-XRF), secondary ion mass spectrometry, x-ray photoelectron spectroscopy, Rutherford backscattering spectrometry, as well as Hall mobility and four-point probe resistivity measurements. After properly taking into account their respective artifacts, the results of all methods are compatible with each other, with EELS and GI- XRF combined with etching providing similar spatial resolution on the nanometer scale for the dopant profile. The sheet concentration of the piled-up As at the interface was found to be ~1x10(exp 15) cm-2 for an implanted dose of 1x10(exp 16) cm-2 with a maximum concentration of ~10 at. %. The strain observed in the Z-contrast images also suggests a significant concentration of local distortions within 3 nm from the interface, which, however, do not seem to involve intrinsic point defects

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