Open AccessTerahertz gain on shallow donor transitions in silicon
Author(s) -
R. Kh. Zhukavin,
V. N. Shastin,
S. G. Pavlov,
HeinzWilhelm Hübers,
J. N. Hovenier,
T.O. Klaassen,
A. F. G. van der Meer
Publication year - 2007
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.2804756
Subject(s) - photoexcitation , laser , excited state , terahertz radiation , atomic physics , materials science , optical pumping , far infrared laser , laser pumping , silicon , gain , optoelectronics , free electron laser , amplifier , active laser medium , physics , optics , laser power scaling , cmos
Small signal gain measurements of optically excited terahertz silicon lasers are reported. Two types of lasers, Si:P and Si:Bi, were investigated. They were optically excited with radiation from a free electron laser or a CO2 laser. The experiments were performed with an oscillator-amplifier scheme where one sample serves as a laser while the other one is an amplifier. In case of the free electron laser the pump frequency corresponds to intracenter excitation of the 2p0 or 2p± states of the P and Bi Coulomb centers, and the gain was determined for the 2p0?1s(E), 2p0?1s(T2) transitions in Si:P and the 2p±?1s(E) transition in Si:Bi. Pumping with a CO2 laser leads to photoexcitation of the Coulomb centers. In this case the gain was determined for the 2p0?1s(T2) of Si:P transition. The gain for intracenter pumping is in the range 5?10?cm?1 while for photoexcitation the gain is considerably less, namely ? 0.5?cm?1. The experimental results are analyzed and found to be in good agreement with theoretical calculations based on balance equations
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