Open AccessFabrication and electrical characteristics of Si nanocrystal/c-Si heterojunctions
Author(s) -
Dengyuan Song,
EunChel Cho,
Gavin Conibeer,
Yidan Huang,
Martin A. Green
Publication year - 2007
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.2787883
Subject(s) - heterojunction , materials science , rectification , nanocrystal , diode , optoelectronics , transmission electron microscopy , fabrication , atmospheric temperature range , substrate (aquarium) , nanotechnology , voltage , electrical engineering , medicine , alternative medicine , physics , pathology , oceanography , geology , meteorology , engineering
Heterojunctions HJs were fabricated from p-type Si nanocrystals Si NCs embedded in a SiC matrix on an n-type crystalline Si substrate. Transmission electron microscopy revealed that Si NCs are clearly established, with sizes in the range of 3-5 nm. The HJ diodes showed a good rectification ratio of 1.0 104 at ±1.0 V at 298 K. The ideality factor, junction built-in potential, and open-circuit voltage are 1.24, 0.72 V, and 0.48 V, respectively. Measurement of temperature-dependent I-V curves in forward conduction suggests that, in the medium voltage range, junction interface recombination can be described as the dominant current transport mechanism
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