Open AccessDoping level dependence of electron irradiation-induced minority carrier diffusion length increase in Mg-doped GaN
Author(s) -
O. LopatiukTirpak,
Leonid Chernyak,
Y. L. Wang,
F. Ren,
S. J. Pearton,
Konstantin Gartsman
Publication year - 2007
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.2776866
Subject(s) - doping , irradiation , diffusion , materials science , electron beam processing , activation energy , electron beam induced current , electron , wide bandgap semiconductor , electron mobility , carrier lifetime , analytical chemistry (journal) , cathode ray , molecular physics , atomic physics , chemistry , optoelectronics , silicon , physics , chromatography , quantum mechanics , nuclear physics , thermodynamics
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