Open AccessPlanar Hall effect and magnetic anisotropy in epitaxially strained chromium dioxide thin films
Author(s) -
Sebastian T. B. Goennenwein,
R. S. Keizer,
S. W. Schink,
Inge van Dijk,
T. M. Klapwijk,
GuoXing Miao,
Gang Xiao,
Arunava Gupta
Publication year - 2007
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.2715442
Subject(s) - magnetoresistance , condensed matter physics , materials science , magnetic anisotropy , anisotropy , thin film , planar , epitaxy , hall effect , magnetic field , composite material , optics , magnetization , nanotechnology , physics , computer graphics (images) , layer (electronics) , quantum mechanics , computer science
We have measured the in-plane anisotropic magnetoresistance of 100?nm thick CrO2 thin films at liquid He temperatures. In low magnetic fields H, both the longitudinal and the transverse (planar Hall) resistance show abrupt switches, which characteristically depend on the orientation of H. All the experimental findings consistently demonstrate that the magnetic anisotropy in these CrO2 thin films is biaxial. We show that the biaxial magnetic anisotropy is due to epitaxial coherency strain, and that it naturally explains the complex magnetic switching behavior reported recently in CrO2 films with thicknesses of 50?nm ? d ? 250?nm
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