On the origin of the 1∕f noise in shallow germanium p+-n junctions
Author(s) -
R Todi,
Sushant Sonde,
E. Simoen,
C. Claeys,
Kalpathy B. Sundaram
Publication year - 2007
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.2431759
Subject(s) - germanium , ohmic contact , germanide , flicker noise , noise (video) , diode , equivalent series resistance , contact resistance , condensed matter physics , optoelectronics , materials science , physics , silicon , noise figure , nanotechnology , voltage , quantum mechanics , artificial intelligence , computer science , image (mathematics) , amplifier , cmos , layer (electronics)
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