p type doping of zinc oxide by arsenic ion implantation
Author(s) -
G. Braunstein,
A. Muraviev,
Himanshu Saxena,
Neelkanth G. Dhere,
V. Richter,
R. Kalish
Publication year - 2005
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.2128064
Subject(s) - annealing (glass) , materials science , ion implantation , arsenic , doping , conductivity , zinc , analytical chemistry (journal) , crystallite , electrical resistivity and conductivity , ion , nitrogen , metallurgy , chemistry , optoelectronics , chromatography , electrical engineering , organic chemistry , engineering
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