Open AccessResonant tunneling characteristics in SiO2/Si double-barrier structures in a wide range of applied voltage
Author(s) -
Hiroya Ikeda,
Masanori Iwasaki,
Yasuhiko Ishikawa,
Michiharu Tabe
Publication year - 2003
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.1603352
Subject(s) - quantum tunnelling , electron , substrate (aquarium) , diode , kinetic energy , silicon , ionization , materials science , scattering , atomic physics , range (aeronautics) , hysteresis , condensed matter physics , analytical chemistry (journal) , chemistry , optoelectronics , optics , physics , ion , oceanography , organic chemistry , quantum mechanics , chromatography , composite material , geology
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