Determination of aluminum diffusion parameters in silicon | Zendy

O. Krause | Zendy; H. Ryssel | Zendy; P. Pichler | Zendy

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Determination of aluminum diffusion parameters in silicon

Author(s) -

O. Krause,

H. Ryssel,

P. Pichler

Publication year - 2002

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.1465501

Subject(s) - silicon , aluminium , dopant , materials science , diffusion , thermal diffusivity , boron , acceptor , doping , semiconductor , fabrication , semiconductor device , analytical chemistry (journal) , optoelectronics , metallurgy , chemistry , nanotechnology , condensed matter physics , thermodynamics , medicine , physics , alternative medicine , organic chemistry , pathology , layer (electronics) , chromatography

Aluminum as the fastest diffusing acceptor dopant in silicon is commonly used for the fabrication of power semiconductors with p-n junction depths ranging from some microns to more than hundred microns. Although used since long, its diffusion behavior was not sufficiently characterized to support computer-aided design of new devices. In this work, the intrinsic diffusion of aluminum was investigated in the temperature range from 850 to 1290°C. Combining nitridation and oxidation experiments, the fractional diffusivity via self-interstitials was determined. By diffusion in high-concentration boron- and phosphorus-doped silicon the behavior of aluminum under extrisic conditions was investigated

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