Open AccessSi 3 N 4 / AlGaN/GaN –metal–insulator–semiconductor heterostructure field–effect transistors
Author(s) -
X. Hu,
A. Koudymov,
G. Simin,
Jinwei Yang,
M. Asif Khan,
Ahmad Tarakji,
M. S. Shur,
R. Gaška
Publication year - 2001
Publication title -
applied physics letters
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.1412591
Subject(s) - materials science , optoelectronics , heterojunction , transistor , passivation , field effect transistor , wide bandgap semiconductor , insulator (electricity) , semiconductor , leakage (economics) , threshold voltage , mosfet , voltage , electrical engineering , nanotechnology , layer (electronics) , economics , macroeconomics , engineering
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