Open AccessElectric-field dependence of mobile proton-induced switching in protonated gate oxide field-effect transistors
Author(s) -
R. A. B. Devine
Publication year - 2000
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.1311608
Subject(s) - oxide , materials science , gate oxide , electric field , field effect transistor , transistor , optoelectronics , extrapolation , mosfet , threshold voltage , current (fluid) , voltage , analytical chemistry (journal) , chemistry , electrical engineering , physics , quantum mechanics , chromatography , metallurgy , engineering , mathematical analysis , mathematics
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