Electron beam-induced increase of electron diffusion length in p-type GaN and AlGaN/GaN superlattices
Author(s) -
Leonid Chernyak,
A. Osinsky,
V. Fuflyigin,
E. Fred Schubert
Publication year - 2000
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.1306910
Subject(s) - superlattice , wide bandgap semiconductor , materials science , electron , cathode ray , diffusion , condensed matter physics , electron beam induced current , optoelectronics , silicon , physics , quantum mechanics , thermodynamics
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