Open AccessAlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substrates
Author(s) -
M. Asif Khan,
X. Hu,
Ahmad Tarakji,
G. Simin,
J. Yang,
R. Gaška,
M. S. Shur
Publication year - 2000
Publication title -
applied physics letters
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.1290269
Subject(s) - materials science , optoelectronics , heterojunction , transistor , wide bandgap semiconductor , microwave , field effect transistor , semiconductor , voltage , electrical engineering , physics , quantum mechanics , engineering
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