Open AccessObservation of singly ionized selenium vacancies in ZnSe grown by molecular beam epitaxy
Author(s) -
Scott D. Setzler,
Simona Moldovan,
Zhonghai Yu,
T. H. Myers,
N. C. Giles,
L. E. Halliburton
Publication year - 1997
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.118836
Subject(s) - molecular beam epitaxy , electron paramagnetic resonance , vacancy defect , materials science , selenium , doping , laser linewidth , thin film , crystallographic defect , epitaxy , ionization , analytical chemistry (journal) , chemistry , nuclear magnetic resonance , optoelectronics , crystallography , optics , nanotechnology , ion , physics , organic chemistry , layer (electronics) , metallurgy , laser , chromatography
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