Open AccessProperties of Schottky contacts of aluminum on strained Si1−x−yGexCy layers
Author(s) -
Jian Mi,
Ashawant Gupta,
Cary Y. Yang,
Jintian Zhu,
Paul K. L. Yu,
P. Warren,
M. Dutoit
Publication year - 1996
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.117208
Subject(s) - schottky diode , materials science , annealing (glass) , rapid thermal processing , aluminium , alloy , analytical chemistry (journal) , schottky barrier , diode , diffraction , stress relaxation , dislocation , silicon , optoelectronics , metallurgy , composite material , optics , chemistry , physics , creep , chromatography
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