Open AccessDetermination of density of trap states at Y2O3-stabilized ZrO2/Si interface of YBa2Cu3O7−δ /Y2O3-stabilized ZrO2/Si capacitors
Author(s) -
Jianmin Qiao,
Kuohsu Wang,
Cary Y. Yang
Publication year - 1994
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.111793
Subject(s) - materials science , capacitor , dopant , yttria stabilized zirconia , cubic zirconia , fermi level , doping , condensed matter physics , band gap , analytical chemistry (journal) , optoelectronics , ceramic , voltage , chemistry , electrical engineering , composite material , electron , physics , quantum mechanics , chromatography , engineering
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom