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Effective band-gap shrinkage in GaAs
Author(s) -
E. S. Harmon,
M. R. Melloch,
Mark Lundstrom
Publication year - 1994
Publication title -
applied physics letters
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.111110
Subject(s) - homojunction , materials science , thermal diffusivity , doping , band gap , optoelectronics , shrinkage , condensed matter physics , bipolar junction transistor , gallium arsenide , diode , transistor , voltage , electrical engineering , physics , composite material , thermodynamics , engineering

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