Ferroelectric properties of lead-zirconate-titanate films prepared by laser ablation | Zendy

Hideo Kidoh | Zendy; Toshio Ogawa | Zendy; Akiharu Morimoto | Zendy; Tatsuo Shimizu | Zendy

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Ferroelectric properties of lead-zirconate-titanate films prepared by laser ablation

Author(s) -

Hideo Kidoh,

Toshio Ogawa,

Akiharu Morimoto,

Tatsuo Shimizu

Publication year - 1991

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.104719

Subject(s) - materials science , lead zirconate titanate , ferroelectricity , sapphire , laser ablation , annealing (glass) , thin film , pulsed laser deposition , electrode , excimer laser , optoelectronics , laser , ablation , dielectric , composite material , nanotechnology , optics , chemistry , physics , engineering , aerospace engineering

Ferroelectric lead‐zirconate‐titanate (PZT) thin films have been deposited by excimer laser ablation on sapphire substrates with and without an electrode. In preparation for the films, O2 gas pressure has greatly influenced the film structure and morphology. For the first time, we have confirmed the ferroelectric properties of PZT films prepared by laser ablation without post‐annealing. It appears to be possible to use these films for nonvolatile random access memories with some additional improvements in the film properties

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