Open AccessSurface passivation effects of As2S3 glass on self-aligned AlGaAs/GaAs heterojunction bipolar transistors
Author(s) -
H. L. Chuang,
M. S. Carpenter,
M. R. Melloch,
Mark Lundstrom,
Eli Yablonovitch,
T. J. Gmitter
Publication year - 1990
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.104114
Subject(s) - passivation , heterojunction , bipolar junction transistor , materials science , heterojunction bipolar transistor , optoelectronics , current density , degradation (telecommunications) , transistor , gallium arsenide , nanotechnology , voltage , electrical engineering , layer (electronics) , physics , engineering , quantum mechanics
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