Open AccessElectrical and structural characterization of in situ MOCVD Al2O3/β-Ga2O3 and Al2O3/β-(AlxGa1−x)2O3 MOSCAPs
Author(s) -
A F M Anhar Uddin Bhuiyan,
Lingyu Meng,
Dong Su Yu,
Sushovan Dhara,
HsienLien Huang,
Vijay Gopal Thirupakuzi Vangipuram,
Jinwoo Hwang,
Siddharth Rajan,
Hongping Zhao
Publication year - 2025
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/5.0256525
Subject(s) - metalorganic vapour phase epitaxy , in situ , characterization (materials science) , materials science , x ray crystallography , chemistry , mineralogy , nanotechnology , diffraction , physics , epitaxy , optics , organic chemistry , layer (electronics)
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