Open AccessW band solid‐state power amplifier for aerospace usage
Author(s) -
Yang Fei,
Li Jun,
Yu HongXi,
Zhao HengFei,
Zhao Ying,
Chen XiaoMing,
Zhang AnXue,
Jin ZhongHe
Publication year - 2022
Publication title -
the journal of engineering
Language(s) - English
Resource type - Journals
ISSN - 2051-3305
DOI - 10.1049/tje2.12102
Subject(s) - amplifier , high electron mobility transistor , electrical engineering , transistor , power added efficiency , gallium nitride , power (physics) , electronic engineering , voltage , materials science , engineering , operational amplifier , cmos , physics , layer (electronics) , quantum mechanics , composite material
Concentrating on the high frequency aerospace demand of solid‐state power amplifier (SSPA), this paper presents the methodology and key technique of a W‐band 3‐W SSPA that achieves high efficiency while maintaining excellent reliability capability. An improved Magic‐T power combiner is utilized to achieve high output power, and eliminate the influence of the parallel end‐stage gallium‐nitride high‐electron‐mobility‐transistor (GaN HEMT) PAs by its good isolation performance. The SSPA's millimetre‐wave circuit is implemented by three stages of amplifier, to realized more than 30‐dB power gain. The power‐supply circuit based on the two‐transistor forward topology is proposed for voltage converting and output serious sequence controlling. The SSPA is fabricated and measured, achieving 33‐dBm to 34.1‐dBm output power within the frequency range of 92–96 GHz, with the power gain of 31–32 dB, and peak efficiency of 7.1%, respectively. The proposed SSPA shows competitive performance for space application.