z-logo
open-access-imgOpen Access
Design and simulation of a novel dual current mirror based CMOS‐MEMS integrated pressure sensor
Author(s) -
Kumar Shashi,
Ropmay Gaddiella Diengdoh,
Rathore Pradeep Kumar,
Rangababu Peesapati,
Akhtar Jamil
Publication year - 2021
Publication title -
iet science, measurement and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.418
H-Index - 49
eISSN - 1751-8830
pISSN - 1751-8822
DOI - 10.1049/smt2.12028
Subject(s) - cmos , wheatstone bridge , pressure sensor , multiphysics , piezoresistive effect , materials science , electrical engineering , sensitivity (control systems) , microelectromechanical systems , ranging , electronic engineering , voltage , optoelectronics , engineering , resistor , finite element method , telecommunications , mechanical engineering , structural engineering
Abstract This paper presents a novel dual current mirror based CMOS circuit for design and development of highly sensitive CMOS‐MEMS integrated pressure sensors. The proposed pressure sensing structure has been designed using piezoresistive effect in MOSFETs and 5 μm standard CMOS technology parameters. The proposed structure includes six p‐ and n‐channel MOSFETs and two square silicon diaphragms. MOSFETs MP1 and MN1 are the reference transistors and are placed on the substrate. The pressure sensing MOSFETs MP2 and MP3 are integrated at the mid of fixed edge and at the centre of the diaphragm‐1 to sense the maximum tensile and compressive stress developed due to applied pressure. Similarly, the pressure sensing MOSFETs MN2 and MN3 are embedded at the mid of fixed edge and at the centre of the diaphragm‐2. COMSOL Multiphysics and LTspice softwares are used for the design and simulation of proposed sensor. The sensitivity of proposed sensor is found to be approximately 7.7 mV/kPa for an input pressure ranging from 0–200 kPa. The output voltage of the sensor has a temperature sensitivity of approximately −0.2 mV/°C for an operating temperature ranging from −50 to 100 °C at 200 kPa. This CMOS circuit may be an alternative to traditional Wheatstone bridge circuits in future.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here