Open AccessA novel SiC trench MOSFET with integrated Schottky barrier diode for improved reverse recovery charge and switching loss
Author(s) -
Liu Sicheng,
Tang Xiaoyan,
Song Qingwen,
Wang Yuehu,
Bai Ruijie,
Zhang Yimen,
Zhang Yuming
Publication year - 2021
Publication title -
iet power electronics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.637
H-Index - 77
eISSN - 1755-4543
pISSN - 1755-4535
DOI - 10.1049/pel2.12169
Subject(s) - materials science , trench , optoelectronics , mosfet , silicon carbide , schottky diode , schottky barrier , diode , transistor , electrical engineering , layer (electronics) , voltage , nanotechnology , engineering , composite material
In this paper, a novel silicon carbide (SiC) trench metal oxide semiconductor field effect transistor (MOSFET) with improved reverse recovery charge and switching energy loss is proposed and investigated utilising ISE‐TCAD simulations. The proposed structure features an integrated Schottky barrier diode on one side‐wall of the trench below the P‐base region, and an inserted thicker oxide layer between the polysilicon gate and source metal on one side‐wall of the trench. The simulation results show that compared with Infineon's CoolSiC™ Trench MOSFET, the proposed device decreases the gate charge Q g by 29.2%, leading to significantly improved figures of merit ( R on,sp × Q g ). The reverse recovery charge Q rr and peak reverse recovery current ( I RRM ) are reduced by 64.1% and 66.0%, respectively. Meanwhile, the total switching energy loss decreases 36.7% for the dynamic performance.