Open AccessSelection of an IGCT for multilevel converters dedicated to high‐voltage direct current grid connection of offshore wind‐farms
Author(s) -
Guedon Davin,
Ladoux Philippe,
Sanchez Sébastien,
Cornet Sébastien,
Stiasny Thomas,
Winter Christian
Publication year - 2021
Publication title -
iet power electronics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.637
H-Index - 77
eISSN - 1755-4543
pISSN - 1755-4535
DOI - 10.1049/pel2.12145
Subject(s) - offshore wind power , thyristor , integrated gate commutated thyristor , grid connection , converters , engineering , grid , electrical engineering , power (physics) , high voltage , voltage , wind power , computer science , automotive engineering , physics , geometry , mathematics , quantum mechanics
Grid connection of remote offshore wind‐parks uses high‐voltage direct current technology and in order to reduce costs and losses and maximise profitability, semiconductor power losses must be minimised. To properly choose the semiconductors, it is necessary to estimate their losses for a large number of operating conditions. This article deals with a modelling approach to calculate power losses for many such operating conditions, based on measured semiconductor characteristics and the chosen multilevel modulation strategy. The case of the integrated gate‐commutated thyristor is considered because, for a given device rating, it is possible to select an integrated gate‐commutated thyristor benefiting from the best trade‐off between on‐state losses and turn‐off losses, thus minimising the power losses of the two end‐stations.