Open AccessAlGaAs/GaAs asymmetric‐waveguide, short cavity laser diode design with a bulk active layer near the p ‐cladding for high pulsed power emission
Author(s) -
Avrutin Eugene A.,
Ryvkin Boris S.,
Kostamovaara Juha T.
Publication year - 2021
Publication title -
iet optoelectronics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.379
H-Index - 42
eISSN - 1751-8776
pISSN - 1751-8768
DOI - 10.1049/ote2.12033
Subject(s) - materials science , cladding (metalworking) , optoelectronics , laser , diode , pulse duration , nanosecond , active layer , optics , wavelength , waveguide , equivalent series resistance , semiconductor laser theory , laser diode , transverse mode , layer (electronics) , voltage , thin film transistor , quantum mechanics , metallurgy , physics , composite material
It is shown theoretically that a GaAs/AlGaAs laser diode design using an asymmetric waveguide structure and a bulk active layer (AL), located close to the p‐cladding, can provide high output power in a single, broad transverse mode for short‐wavelength (<0.9 μm, matching the spectral range of high efficiency of silicon photodetectors) pulsed emission in the nanosecond pulse duration region, typically <<100 ns. The dependences of the laser performance on the thickness of the AL and the cavity length are analysed. It is shown that the relatively thick bulk AL allows the of short cavity lengths (<1 mm), for achieving high pulsed power while maintaining a relatively low series resistance and a narrow far field.