Open AccessTransverse electric/magnetic switchable absorption ring modulator based on graphene
Author(s) -
Zhou Feng,
Liang Chen
Publication year - 2021
Publication title -
iet optoelectronics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.379
H-Index - 42
eISSN - 1751-8776
pISSN - 1751-8768
DOI - 10.1049/ote2.12032
Subject(s) - graphene , materials science , transverse plane , extinction ratio , optoelectronics , absorption (acoustics) , optical modulator , optics , wavelength , perpendicular , electro absorption modulator , transverse mode , monolayer , phase modulation , physics , nanotechnology , quantum dot laser , semiconductor laser theory , geometry , structural engineering , mathematics , diode , phase noise , engineering , composite material , laser
We propose a transverse electric (TE)/transverse magnetic (TM) switchable absorption ring modulator based on graphene that can operate in either the TE or the TM mode. By adjusting the applied voltages onto the graphene layers in horizontal and perpendicular directions, either a TE or a TM absorption ring modulator can be configured, as has been previously reported. The simulation results show that a TE or TM modulator can be configured with a large extinction ratio and wide waveband from 1300 to 2000 nm. Specifically, the modulation bandwidth can be enlarged to over 130 GHz, which is rarely seen in conventional ring modulators. Also investigated is the possibility of extending the resonance wavelength shift to more than 5 nm by replacing the monolayer graphene structure with a quadrilayer graphene structure.