Open AccessDesign of double‐layer SiN x :H film and its application in c‐Si PERC solar cells
Author(s) -
Jinxing Fan,
Yin Wang,
Hongping Zhou,
Linyun Xu,
Yanhua Yang
Publication year - 2020
Publication title -
micro and nano letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.25
H-Index - 31
ISSN - 1750-0443
DOI - 10.1049/mnl.2020.0175
Subject(s) - materials science , layer (electronics) , solar cell , double layer (biology) , engineering physics , optoelectronics , nanotechnology , physics
The existing solar cell anti‐reflection film technology still cannot adequately meet the light trapping needs of solar cells. In this Letter, double‐layered SiN x :H films were prepared for c‐Si solar cells by plasma enhanced chemical vapor deposition (PECVD). Herein, the authors introduce a simple, convenient method to lower the reflectance in silicon solar cells by applying double‐layered SiN x :H film to increase the refractive index of such film. Compared to the single layer film devices, the reflectance of the double‐layered SiN x :H film can be significantly reduced by >30% through enhanced absorption of light in solar cells. This method has achieved an average of 0.08% conversion efficiency, with the highest being 0.18%. In addition, the double‐layer film solar cells also showed a better passivation performance than that of the single‐layer film, so that the minority carrier lifetime was up to 137 µs. Therefore, the improvement of solar cell efficiency mainly come from the decrease of reflectivity and the improvement in film passivation performance. The work of this Letter demonstrated the light trapping advantages and passivation enhancement performance of double‐layer films applied to single crystal silicon solar cells.