Waveguide integrated GaN distributed Bragg reflector cavity using low‐cost nanolithography

This work presents the design, fabrication and measurement of gallium nitride (GaN) distributed Bragg reflector cavities integrated with input and output grating couplers. The devices are fabricated using a new, low‐cost nanolithography technique: displacement Talbot lithography combined with direct laser writing lithography. The finite‐difference time‐domain method has been used to design all the components and measured and modelled results show good agreement. Such devices have applications in GaN integrated photonics and biosensing.