Design and analysis of novel tri‐active layer channel amorphous‐IGZO thin‐film transistor

Among high‐field mobility materials, amorphous indium–gallium–zinc oxide (In–Ga–ZnO) (α‐IGZO) has been prominent for their use in thin‐film transistors (TFTs). In this Letter, the authors present a novel structure of TFT with tri‐active layer (TAL) channel consisting of α‐IGZO and In–SnO (ITO) materials. Further, the simulation‐based analysis of the proposed device and characteristics in comparison to the single and double active layer channel structures have been reported. This work also analyses the effect of front–back channel thickness‐ratios in double‐active layer channel TFTs. The proposed TAL channel TFT describes improved switching parameters such as lower threshold voltage ( V TH ) − 4.24 V, high field‐effect mobility ( µ FE ) 38.4 cm 2 /V‐s, moderate subthreshold swing 0.398 mV/decade, and reasonably high ON‐to‐OFF current ratio ( I ON / I OFF ) 0.18 × 10 12 . The electrical characteristics persuade the significance of the proposed structure in next‐generation flat‐panel displays.