Open AccessEffects of Cu doping on the properties of NiO film fabricated using the sol–gel method based on the rapid pyrolysis process
Author(s) -
Song Mengsi,
Liu Chaoqian,
Wang Nan,
Lun Tingting,
Zhai Xiaona,
Ge Qing,
Zhang Xiaoyang,
Wu Sumei,
Liu Shimin,
Wang Hualin,
Jiang Weiwei,
Ding Wanyu
Publication year - 2020
Publication title -
micro and nano letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.25
H-Index - 31
ISSN - 1750-0443
DOI - 10.1049/mnl.2019.0241
Subject(s) - diffractometer , materials science , non blocking i/o , doping , electrical resistivity and conductivity , scanning electron microscope , analytical chemistry (journal) , band gap , transmittance , impurity , hall effect , sol gel , thin film , chemical engineering , nanotechnology , composite material , optoelectronics , chemistry , chromatography , biochemistry , organic chemistry , electrical engineering , engineering , catalysis
The sol–gel method based on the rapid pyrolysis process was adopted to prepare Ni 1− x Cu x O ( x = 0–0.1) films on glass substrates. The effects of Cu doping on the structural, morphological, electrical and optical properties of the films were characterised by X‐ray diffractometer, scanning electron microscope, Hall effect instrument and ultraviolet‐visible spectrophotometer, respectively. The NiO‐based films have a cubic rock salt structure and it was found that the film with x = 0.06 should have minimal residual stress. The transmittance and bandgap of the films decreased with increasing Cu‐doping concentration. In addition, the compactness of the films increased along with the increase of Cu‐doping concentration as a whole. The carrier concentration of the films was almost invariable, but the carrier mobility was determined by the competition between the effects of the morphology and the ionised impurity scattering. The resistivity of the films first decreases and then increases, and the minimum resistivity was 182.1 Ω cm at x = 0.06.