Open AccessPreparation and characteristics of tunnelling effect transistor using copper phthalocyanine
Author(s) -
Zhang Zhiwen,
Wang Dongxing,
Yang Meizhong,
Yuan Danni
Publication year - 2019
Publication title -
micro and nano letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.25
H-Index - 31
ISSN - 1750-0443
DOI - 10.1049/mnl.2019.0154
Subject(s) - quantum tunnelling , transistor , materials science , optoelectronics , current (fluid) , static induction transistor , copper phthalocyanine , voltage , copper , threshold voltage , electrical engineering , engineering , metallurgy
A tunnelling effect transistor based on copper phthalocyanine (CuPc) has been fabricated. CuPc is the active layer of transistors. The basic characteristics of the transistor are measured. The device shows unsaturated output characteristics. The output current can be modulated by demanding different gate voltage. At V DS = 3 V and V GS = 0 V, the drain‐source current is 1.89 × 10 −4 A. The current density is 4.73 × 10 −3 A/cm 2 . The tunnel injection model is used to analyse the carrier transport inside the transistor. The microscopic operating mechanism of the device is investigated. The results show that the operating current of the transistor conforms to the tunnelling effect theory.